This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1016/j.physe.2005.12.134 in citations.
Effect of confinement on the weak antilocalization in InGaAs/InP quasi-1D structures
Effect of confinement on the weak antilocalization in InGaAs/InP quasi-1D structures
Magnetotransport properties of quasi-one-dimensional (quasi-1D) quantum wires based on lnGaAs/1nP heterojunctions were studied. The influence of the wire width as well as of the temperature on the weak antilocalization was investigated. A crossover from the weak antilocalization to the weak localiza...
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Personal Name(s): | Guzenko, V. A. |
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Schäpers, T. / Indlekofer, K. M. / Knobbe, J. | |
Contributing Institute: |
Center of Nanoelectronic Systems for Information Technology; CNI Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Physica / E, 32 (2006) S. 333 - 336 |
Imprint: |
Amsterdam [u.a.]
North-Holland, Elsevier Science
2006
|
Physical Description: |
333 - 336 |
DOI: |
10.1016/j.physe.2005.12.134 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physica E
32 |
Subject (ZB): | |
Publikationsportal JuSER |
Magnetotransport properties of quasi-one-dimensional (quasi-1D) quantum wires based on lnGaAs/1nP heterojunctions were studied. The influence of the wire width as well as of the temperature on the weak antilocalization was investigated. A crossover from the weak antilocalization to the weak localization regime was observed in the very narrow wires. The analysis of the characteristic scattering lengths suggests a strong effect of the electron confinement and diffusive boundary scattering on the suppression of the weak antilocalization. (c) 2006 Elsevier B.V. All rights reserved. |