This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1016/j.tsf.2005.07.298 in citations.
Material study on reactively sputtered zinc oxide for thin film silicon solar cells
Material study on reactively sputtered zinc oxide for thin film silicon solar cells
Aluminum doped zinc oxide (ZnO:Al, AZO) films were prepared by reactive mid frequency magnetron sputtering. We characterized the electrical and optical properties as well as the surface morphology obtained after wet chemical etching. The carrier mobility could be increased up to 42 cm(2)/Vs and the...
Saved in:
Personal Name(s): | Hüpkes, J. |
---|---|
Rech, B. / Calnan, S. / Kluth, O. / Zastrow, U. / Siekmann, H. / Wuttig, M. | |
Contributing Institute: |
Institut für Photovoltaik; IPV JARA-FIT; JARA-FIT |
Published in: | Thin solid films, 502 (2006) S. 286 - 291 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2006
|
Physical Description: |
286 - 291 |
DOI: |
10.1016/j.tsf.2005.07.298 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Thin Solid Films
502 |
Subject (ZB): | |
Publikationsportal JuSER |
Aluminum doped zinc oxide (ZnO:Al, AZO) films were prepared by reactive mid frequency magnetron sputtering. We characterized the electrical and optical properties as well as the surface morphology obtained after wet chemical etching. The carrier mobility could be increased up to 42 cm(2)/Vs and the transmission between 400 and 1100 nm was enhanced by the reduction of aluminum content in the targets. The working point of the reactive sputtering process strongly influences the etching behavior and was used to optimize the light scattering properties of the ZnO:Al films after wet chemical etching. Finally, the texture-etched ZnO:Al films were successfully applied as substrates for silicon thin film solar cells. (c) 2005 Elsevier B.V All rights reserved. |