This title appears in the Scientific Report :
2007
Please use the identifier:
http://hdl.handle.net/2128/18083 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.2426890 in citations.
One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)
One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)
Ge nanostructures grown by molecular beam epitaxy on a vicinal Si(111) surface with atomically well-defined steps are studied by means of scanning tunneling microscopy and spectroscopy. When the substrate temperature during deposition is around 250 degrees C, Ge nanoclusters of diameters less than 2...
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Personal Name(s): | Sekiguchi, T. |
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Yoshida, S. / Itoh, K. M. / Myslivecek, J. / Voigtländer, B. | |
Contributing Institute: |
Grenz- und Oberflächen; IBN-3 JARA-FIT; JARA-FIT Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Applied physics letters, 90 (2007) S. 013108 |
Imprint: |
Melville, NY
American Institute of Physics
2007
|
Physical Description: |
013108 |
DOI: |
10.1063/1.2426890 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Applied Physics Letters
90 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.2426890 in citations.
Ge nanostructures grown by molecular beam epitaxy on a vicinal Si(111) surface with atomically well-defined steps are studied by means of scanning tunneling microscopy and spectroscopy. When the substrate temperature during deposition is around 250 degrees C, Ge nanoclusters of diameters less than 2.0 nm form a one-dimensional array of the periodicity 2.7 nm along each step. This self-organization is due to preferential nucleation of Ge on the unfaulted 7 x 7 half-unit cells at the upper step edges. Scanning tunneling spectroscopy reveals localized electronic states of the nanoclusters. (c) 2007 American Institute of Physics. |