This title appears in the Scientific Report :
2007
Please use the identifier:
http://dx.doi.org/10.1002/pssr.200600065 in citations.
Defects in thin film silicon at the transition from amorphous to microcrystalline structure
Defects in thin film silicon at the transition from amorphous to microcrystalline structure
Defects in thin film silicon with different structure all the way from amorphous to microcrystalline were investigated by electron spin resonance with emphasis on amorphous material prepared close to the transition to crystalline growth. Electron beam irradiation and stepwise annealing is used for r...
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Personal Name(s): | Astakhov, O. |
---|---|
Carius, R. / Petrusenko, Y. / Borysenko, V. / Barankov, D. / Finger, F. | |
Contributing Institute: |
Photovoltaik; IEF-5 |
Published in: | Physica status solidi / Rapid research letters, 1 (2007) S. R77 - R79 |
Imprint: |
Weinheim
Wiley-VCH
2007
|
Physical Description: |
R77 - R79 |
DOI: |
10.1002/pssr.200600065 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Physica Status Solidi - Rapid Research Letters
1 |
Subject (ZB): | |
Publikationsportal JuSER |
Defects in thin film silicon with different structure all the way from amorphous to microcrystalline were investigated by electron spin resonance with emphasis on amorphous material prepared close to the transition to crystalline growth. Electron beam irradiation and stepwise annealing is used for reversible variation of the defect density over three orders of magnitude. The electron irradiation enhances mainly the native paramagnetic defects. Additional resonances are found as satellites to the central line, which anneal rapidly at temperatures below 100 degrees C. These features are most pronounced for the amorphous material prepared close to the transition to crystalline growth. |