This title appears in the Scientific Report :
2000
Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs HEMT
Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs HEMT
Saved in:
Personal Name(s): | Lalinsky, T. |
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Kuzmik, J. / Hasenöhrl, S. / Mozolova, Z. / Kovacik, T. / Skriniarova, J. / Tomaska, M. / Fox, P. T. / Kordos, P. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI |
Published in: |
8th Joint Vacuum Conference |
Imprint: |
2000
|
Conference: | Pula 2000-06-04 |
Document Type: |
Conference Presentation |
Research Program: |
Halbleiterbauelemente und Analytik |
Publikationsportal JuSER |
Description not available. |