This title appears in the Scientific Report :
2007
Please use the identifier:
http://dx.doi.org/10.1063/1.2737136 in citations.
Please use the identifier: http://hdl.handle.net/2128/18078 in citations.
Epitaxially stabilized growth of orthorhombic LuScO3 thin films
Epitaxially stabilized growth of orthorhombic LuScO3 thin films
Metastable lutetium scandate (LuScO3) thin films with an orthorhombic perovskite structure have been prepared by molecular-beam epitaxy and pulsed-laser deposition on NdGaO3(110) and DyScO3(110) substrates. Stoichiometry and crystallinity were investigated using Rutherford backscattering spectrometr...
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Personal Name(s): | Heeg, T. |
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Roeckerath, M. / Schubert, J. / Zander, W. / Buchal, Ch. / Chen, H. Y. / Jia, C. L. / Jia, Y. / Adamo, C. / Schlom, D. G. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 Mikrostrukturforschung; IFF-8 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Applied physics letters, 90 (2007) S. 192901-1 - 192901-3 |
Imprint: |
Melville, NY
American Institute of Physics
2007
|
Physical Description: |
192901-1 - 192901-3 |
DOI: |
10.1063/1.2737136 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Applied Physics Letters
90 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/18078 in citations.
Metastable lutetium scandate (LuScO3) thin films with an orthorhombic perovskite structure have been prepared by molecular-beam epitaxy and pulsed-laser deposition on NdGaO3(110) and DyScO3(110) substrates. Stoichiometry and crystallinity were investigated using Rutherford backscattering spectrometry/channeling, x-ray diffraction, and transmission electron microscopy. The results indicate that LuScO3, which normally only exists as a solid solution of Sc2O3 and Lu2O3 with the cubic bixbyite structure, can be grown in the orthorhombically distorted perovskite structure. Rocking curves as narrow as 0.05 degrees were achieved. A critical film thickness of approximately 200 nm for the epitaxially stabilized perovskite polymorph of LuScO3 on NdGaO3(110) substrates was determined. (C) 2007 American Institute of Physics. |