This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1109/tuffc.2006.182 in citations.
1-D simulation of a novel nonvolatile resistive random access memory device
1-D simulation of a novel nonvolatile resistive random access memory device
The operation of a novel, nonvolatile memory device based on a conductive ferroelectric/semiconductor thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady-state solution of the transport equation for electrons assuming a drift-diffusion transport me...
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Personal Name(s): | Meyer, R. |
---|---|
Kohlstedt, H. | |
Contributing Institute: |
Elektronische Materialien; IFF-IEM |
Published in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 53 (2006) S. 2340 - 2348 |
Imprint: |
New York, NY
IEEE
2006
|
Physical Description: |
2340 - 2348 |
DOI: |
10.1109/tuffc.2006.182 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control
53 |
Subject (ZB): | |
Publikationsportal JuSER |
The operation of a novel, nonvolatile memory device based on a conductive ferroelectric/semiconductor thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady-state solution of the transport equation for electrons assuming a drift-diffusion transport mechanism and the Poisson equation. Special emphasis is put on the screening of the spontaneous polarization by conduction electrons as a function of the applied voltage. Depending on the orientation of the polarization in the ferroelectric layer, a high and a low resistive state are found, giving rise to a hysteretic I-V characteristic. The switching ratio, ranging from > 50% to several orders of magnitude, is calculated as a function of the dopant content. The suggested model provides one possible physical explanation of the I-V hysteresis observed for single-layer ferroelectric devices, if interfacial layers are taken into consideration. The approach will allow one to develop guidelines to improve the performance of these devices. |