This title appears in the Scientific Report :
2007
Please use the identifier:
http://dx.doi.org/10.1016/j.physb.2007.02.079 in citations.
Polarized neutron reflectivity of dilute magnetic semiconductors
Polarized neutron reflectivity of dilute magnetic semiconductors
We report on a polarized neutron reflectivity investigation of the magnetization in Ge-based dilute magnetic semiconductors. We could observe a net magnetization from the splitting of the non-spin flip reflectivity patterns, which measure the magnetic moment parallel and antiparallel to the applied...
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Personal Name(s): | Paul, A. |
---|---|
Braak, H. / Bürgler, D. E. / Schreiber, R. / Rata, D. / Grünberg, P. A. / Schneider, C. M. / Brückel, T. | |
Contributing Institute: |
Streumethoden; IFF-4 JARA-FIT; JARA-FIT Center of Nanoelectronic Systems for Information Technology; CNI Elektronische Eigenschaften; IFF-9 |
Published in: | Physica / B, 397 (2007) S. 59 - 61 |
Imprint: |
Amsterdam
North-Holland Physics Publ.
2007
|
Physical Description: |
59 - 61 |
DOI: |
10.1016/j.physb.2007.02.079 |
Document Type: |
Journal Article |
Research Program: |
Großgeräte für die Forschung mit Photonen, Neutronen und Ionen (PNI) Kondensierte Materie |
Series Title: |
Physica B: Condensed Matter
397 |
Subject (ZB): | |
Publikationsportal JuSER |
We report on a polarized neutron reflectivity investigation of the magnetization in Ge-based dilute magnetic semiconductors. We could observe a net magnetization from the splitting of the non-spin flip reflectivity patterns, which measure the magnetic moment parallel and antiparallel to the applied field. This contrast is visible at 50 K, at remanence and it is pronounced at higher fields even at 250 K for an inhomogeneous specimen. For a homogeneous sample the magnetic variation is visible only at 50 K and above 1.0 kOe. Thus, polarized neutron reflectivity can be a useful tool for investigating the magnetism in homogeneous and inhomogeneous thin film magnetic semiconductors. (c) 2007 Elsevier B.V. All rights reserved. |