This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1088/0957-4484/17/9/011 in citations.
Growth and characterization of high density stoichiometric SiO2 dot arrays on Si through an anodic porous alumina template
Growth and characterization of high density stoichiometric SiO2 dot arrays on Si through an anodic porous alumina template
In this work, we present the fabrication and full characterization of stoichiometric SiO2 nanoisland arrays ( dots) on silicon, grown through an anodic porous alumina template. Atomic force and transmission electron microscopy (AFM, TEM) were used to characterize the morphology, size, size distribut...
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Personal Name(s): | Kokonou, M. |
---|---|
Nassiopoulou, A. G. / Giannakopoulos, K. P. / Travlos, A. / Stoica, T. / Kennou, S. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Nanotechnology, 17 (2006) S. 2146 - 2151 |
Imprint: |
Bristol
IOP Publ.
2006
|
Physical Description: |
2146 - 2151 |
DOI: |
10.1088/0957-4484/17/9/011 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Nanotechnology
17 |
Subject (ZB): | |
Publikationsportal JuSER |
In this work, we present the fabrication and full characterization of stoichiometric SiO2 nanoisland arrays ( dots) on silicon, grown through an anodic porous alumina template. Atomic force and transmission electron microscopy (AFM, TEM) were used to characterize the morphology, size, size distribution and density of the dots as a function of the anodization time used. It was found that dot density is lower for very short anodization times, and it stabilizes after a certain time. The dot height increases rapidly after nucleation, reaching values of 8 - 10 nm. With prolonged oxidation the dots continue to nucleate to fill the available area on the silicon surface underneath the porous alumina, while the well developed dots grow in height and width, reaching saturation values at 14 and 55 nm respectively. X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy ( EELS) were used to investigate the stoichiometry and surface coverage of the dots. |