This title appears in the Scientific Report :
2006
Please use the identifier:
http://dx.doi.org/10.1016/j.physb.2005.12.190 in citations.
Luminescence from ZnO nanoparticles/SiO2 fabricated by ion implantation and thermal oxidation
Luminescence from ZnO nanoparticles/SiO2 fabricated by ion implantation and thermal oxidation
Annealing temperature dependence of photoluminescence (PL) of SiO2 implanted with Zn+ ions of 60 keV to 1.0 x 10(17) ions/cm(2) is evaluated at room temperature. In as-implanted state, no PL is observed because implanted Zn atoms form Zn metallic nanoparticles (NPs). After the annealing in oxygen ga...
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Personal Name(s): | Amekura, H. |
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Sakuma, Y. / Kono, K. / Takeda, Y. / Kishimoto, N. / Buchal, C. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Physica / B, 376-377 (2006) S. 760 - 763 |
Imprint: |
Amsterdam
North-Holland Physics Publ.
2006
|
Physical Description: |
760 - 763 |
DOI: |
10.1016/j.physb.2005.12.190 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physica B: Condensed Matter
376-377 |
Subject (ZB): | |
Publikationsportal JuSER |
Annealing temperature dependence of photoluminescence (PL) of SiO2 implanted with Zn+ ions of 60 keV to 1.0 x 10(17) ions/cm(2) is evaluated at room temperature. In as-implanted state, no PL is observed because implanted Zn atoms form Zn metallic nanoparticles (NPs). After the annealing in oxygen gas at 700 degrees C for 1h, most of Zn NPs transform to ZnO NPs. A strong exciton PL line is observed at 375 nm, in addition to the defect band centered at similar to 500 nm. After the oxygen annealing at 800 degrees C for 1h, the defect band and the exciton line become much stronger and much weaker, respectively. After the oxygen annealing at 900 degrees C for 1h, ZnO NPs transform to Zn2SiO4 phase. From thermodynamics consideration, the increase of the defect PL band after the 800 degrees C annealing is ascribed to defect formation via partial transformation of ZnO NPs to Zn2SiO4 phase. (c) 2005 Elsevier B.V. All rights reserved. |