This title appears in the Scientific Report :
2007
Please use the identifier:
http://dx.doi.org/10.1063/1.2759877 in citations.
Please use the identifier: http://hdl.handle.net/2128/17150 in citations.
Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation
Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation
Diffusion of sulfur (S) in S+ ion implanted Si(100) was investigated after rapid thermal annealing as well as after nickel silicidation. At lower S doses, S segregates to the Si(100) surface when the defects created by the S implantation are reduced during annealing. If the S dose exceeds the amorph...
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Personal Name(s): | Zhao, Q. T. |
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Breuer, U. / Lenk, S. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT Center of Nanoelectronic Systems for Information Technology; CNI Zentralabteilung für Chemische Analysen; ZCH |
Published in: | Journal of applied physics, 102 (2007) S. 023522-1 - 023522-4 |
Imprint: |
Melville, NY
American Institute of Physics
2007
|
Physical Description: |
023522-1 - 023522-4 |
DOI: |
10.1063/1.2759877 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Applied Physics
102 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/17150 in citations.
Diffusion of sulfur (S) in S+ ion implanted Si(100) was investigated after rapid thermal annealing as well as after nickel silicidation. At lower S doses, S segregates to the Si(100) surface when the defects created by the S implantation are reduced during annealing. If the S dose exceeds the amorphization threshold, two heavily damaged regions with dislocation loops appear after annealing. It seems that S atoms form stable complexes with dislocation loops that survive even after high-temperature anneals at 900 degrees C. In contrast, when silicidation comes into play, S atoms appear more mobile. Even during Ni silicidation at 550 degrees C, segregation yields an enrichment of S at the NiSi/Si interface while the defect density and the S content in the deeper Si regions decrease. (C) 2007 American Institute of Physics. |