This title appears in the Scientific Report :
2007
Please use the identifier:
http://dx.doi.org/10.1063/1.2728034 in citations.
Please use the identifier: http://hdl.handle.net/2128/18003 in citations.
Large inverse tunneling magnetoresistance in Co2Cr0.6Fe0.4Al/MgO/Co80Fe20 magnetic tunnel junctions
Large inverse tunneling magnetoresistance in Co2Cr0.6Fe0.4Al/MgO/Co80Fe20 magnetic tunnel junctions
Magnetic tunnel junctions with the layer sequence Co2Cr0.6Fe0.4Al/MgO/Co80Fe20 were fabricated by magnetron sputtering at room temperature (RT). The samples exhibit a large inverse tunneling magnetoresistance (TMR) effect of up to -66% at RT. The largest value of -84% at 20 K reflects a rather weak...
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Personal Name(s): | Rata, A. D. |
---|---|
Braak, H. / Bürgler, D. E. / Schneider, C. M. | |
Contributing Institute: |
Elektronische Eigenschaften; IFF-9 JARA-FIT; JARA-FIT Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Applied physics letters, 90 (2007) S. 162512 |
Imprint: |
Melville, NY
American Institute of Physics
2007
|
Physical Description: |
162512 |
DOI: |
10.1063/1.2728034 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Applied Physics Letters
90 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/18003 in citations.
Magnetic tunnel junctions with the layer sequence Co2Cr0.6Fe0.4Al/MgO/Co80Fe20 were fabricated by magnetron sputtering at room temperature (RT). The samples exhibit a large inverse tunneling magnetoresistance (TMR) effect of up to -66% at RT. The largest value of -84% at 20 K reflects a rather weak influence of temperature. The dependence on the voltage drop shows an unusual behavior with two almost symmetric peaks at +/- 600 mV with large inverse TMR ratios and small positive values around zero bias. (C) 2007 American Institute of Physics. |