This title appears in the Scientific Report :
2007
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevLett.98.257603 in citations.
Please use the identifier: http://hdl.handle.net/2128/7726 in citations.
Elastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions
Elastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions
Taking into account the electrostrictive coupling between inhomogeneous polarization fluctuations and lattice strains in ferroelectric films, we show that, in heterostructures involving strained epitaxial films and metal electrodes, the single-domain state may remain stable against the transformatio...
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Personal Name(s): | Pertsev, N. A. |
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Kohlstedt, H. | |
Contributing Institute: |
Elektronische Materialien; IFF-6 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Physical review letters, 98 (2007) S. 257603 |
Imprint: |
College Park, Md.
APS
2007
|
Physical Description: |
257603 |
DOI: |
10.1103/PhysRevLett.98.257603 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physical Review Letters
98 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/7726 in citations.
Taking into account the electrostrictive coupling between inhomogeneous polarization fluctuations and lattice strains in ferroelectric films, we show that, in heterostructures involving strained epitaxial films and metal electrodes, the single-domain state may remain stable against the transformation into a polydomain state down to the nanometer scale. This result indicates that the ferroelectric states with opposite remanent polarizations can be stabilized even in nanoscale capacitors and tunnel junctions, which opens the possibility of their application for memory storage. |