This title appears in the Scientific Report :
2007
Please use the identifier:
http://dx.doi.org/10.1038/nmat2012 in citations.
Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN
Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN
Doped EuO is an attractive material for the fabrication of proof-of-concept spintronic devices. Yet for decades its use has been hindered by its instability in air and the difficulty of preparing and patterning high-quality thin films. Here, we establish EuO as the pre-eminent material for the direc...
Saved in:
Personal Name(s): | Schmehl, A. |
---|---|
Herrnberger, A. / Thiel, S. / Vaithyanathan, V. / Liberati, M. / Roeckerath, M. / Heeg, T. / Schubert, J. / Idzerda, Y. / Mannhart, J. / Schlom, D. G. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Nature materials, 6 (2007) S. 882 - 887 |
Imprint: |
Basingstoke
Nature Publishing Group
2007
|
Physical Description: |
882 - 887 |
PubMed ID: |
17873862 |
DOI: |
10.1038/nmat2012 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Nature Materials
6 |
Subject (ZB): | |
Publikationsportal JuSER |
Doped EuO is an attractive material for the fabrication of proof-of-concept spintronic devices. Yet for decades its use has been hindered by its instability in air and the difficulty of preparing and patterning high-quality thin films. Here, we establish EuO as the pre-eminent material for the direct integration of a carrier-concentration-matched half-metal with the long-spin-lifetime semiconductors silicon and GaN, using methods that transcend these difficulties. Andreev reflection measurements reveal that the spin polarization in doped epitaxial EuO films exceeds 90%, demonstrating that EuO is a half-metal even when highly doped. Furthermore, EuO is epitaxially integrated with silicon and GaN. These results demonstrate the high potential of EuO for spintronic devices. |