This title appears in the Scientific Report :
2007
Please use the identifier:
http://dx.doi.org/10.1557/JMR.2007.0226 in citations.
Hidden parameters in the plasma deposition of microcrystalline silicon solar cells deposited at high rates
Hidden parameters in the plasma deposition of microcrystalline silicon solar cells deposited at high rates
The effect of process parameters on the plasma deposition of mu c-Si:H solar cells is reviewed in this article. Several in situ diagnostics are presented, which can be used to study the process stability as an additional parameter in the deposition process. The diagnostics were used to investigate t...
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Personal Name(s): | Van den Donker, M. |
---|---|
Rech, B. / Schmitz, R. / Klomfass, J. / Dingemans, G. / Finger, F. / Houben, L. / Kessels, W. M. M. / van de Sanden, M. C. M. | |
Contributing Institute: |
Photovoltaik; IEF-5 |
Published in: | Journal of materials research, 22 (2007) S. 1767 - 1774 |
Imprint: |
Warrendale, Pa.
MRS
2007
|
Physical Description: |
1767 - 1774 |
DOI: |
10.1557/JMR.2007.0226 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Journal of Materials Research
22 |
Subject (ZB): | |
Publikationsportal JuSER |
The effect of process parameters on the plasma deposition of mu c-Si:H solar cells is reviewed in this article. Several in situ diagnostics are presented, which can be used to study the process stability as an additional parameter in the deposition process. The diagnostics were used to investigate the stability of the substrate temperature during deposition at elevated power and the gas composition during deposition at decreased hydrogen dilution. Based on these investigations, an updated view on the role of the process parameters of plasma power, heater temperature, total gas flow rate, and hydrogen dilution is presented. |