This title appears in the Scientific Report :
2007
Please use the identifier:
http://dx.doi.org/10.1063/1.2815645 in citations.
Please use the identifier: http://hdl.handle.net/2128/17137 in citations.
Relationship between the optical absorption and the density of deep gap states in microcrystalline silicon
Relationship between the optical absorption and the density of deep gap states in microcrystalline silicon
We have measured the subgap optical absorption of undoped microcrystalline silicon samples with photothermal deflection spectroscopy and compared it with the spin density measured by electron spin resonance. The material was prepared using the hot wire chemical vapor deposition technique with a broa...
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Personal Name(s): | Klein, S. |
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Finger, F. / Carius, R. / Dylla, T. / Klomfass, J. | |
Contributing Institute: |
Photovoltaik; IEF-5 |
Published in: | Journal of applied physics, 102 (2007) S. 103501 |
Imprint: |
Melville, NY
American Institute of Physics
2007
|
Physical Description: |
103501 |
DOI: |
10.1063/1.2815645 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Journal of Applied Physics
102 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/17137 in citations.
We have measured the subgap optical absorption of undoped microcrystalline silicon samples with photothermal deflection spectroscopy and compared it with the spin density measured by electron spin resonance. The material was prepared using the hot wire chemical vapor deposition technique with a broad range of deposition parameters, yielding materials with a wide variety of structural, optical, and electronic properties. A nearly linear correlation between the spin densities and the subgap absorption coefficient at photon energy of 0.7 eV over three orders of magnitude indicates that the optical absorption in this region is due to the dominating paramagnetic defects, likely dangling bonds. However, the structural composition of the material, determined by Raman spectroscopy, has also some influence on the optical and electronic properties, which leads to some deviation from a straightforward relationship between optical absorption and spin or defect density. (c) 2007 American Institute of Physics. |