This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevB.80.024111 in citations.
Please use the identifier: http://hdl.handle.net/2128/11028 in citations.
Strain relaxation in Fe3O4/MgAl2O4 heterostructures: Mechanism for formation of antiphase boundaries in an epitaxial system with indentical symmetries of film and substrate
Strain relaxation in Fe3O4/MgAl2O4 heterostructures: Mechanism for formation of antiphase boundaries in an epitaxial system with indentical symmetries of film and substrate
Strain relaxation studies in epitaxial magnetite, Fe3O4, thin films grown on MgAl2O4(100) substrates are reported. The study shows that the films were relaxed in line with the theoretical model prediction with a critical thickness, t(c)=5 nm. Antiphase boundaries (APBs) are not expected to form in F...
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Personal Name(s): | Luysberg, M. |
---|---|
Sofin, R.G.S. / Arora, S. K. / Shvets, I. V. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-8 |
Published in: | Physical Review B Physical review / B, 80 80 (2009 2009) 2 2, S. 024111 024111 |
Imprint: |
College Park, Md.
APS
2009
|
Physical Description: |
024111 |
DOI: |
10.1103/PhysRevB.80.024111 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physical Review B
80 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/11028 in citations.
Strain relaxation studies in epitaxial magnetite, Fe3O4, thin films grown on MgAl2O4(100) substrates are reported. The study shows that the films were relaxed in line with the theoretical model prediction with a critical thickness, t(c)=5 nm. Antiphase boundaries (APBs) are not expected to form in Fe3O4 films grown on MgAl2O4 substrates because both film and substrate have the same crystal symmetry. In contrast, our study reveals the formation of APBs within the Fe3O4 films. Our analysis shows that the APBs in a Fe3O4/MgAl2O4 heteroepitaxial system are formed by partial dislocations, which accommodate the misfit. This formation mechanism of APBs is fundamentally different from the one found in the Fe3O4/MgO system, where APBs are formed as a consequence of equivalent nucleation sites on the MgO substrate separated by nontranslational vectors of the Fe3O4 lattice. The mechanism for the formation of antiphase boundaries through partial dislocations should be applicable to a wide range of epitaxial systems having identical symmetries of the film and the substrate and significant lattice mismatch. |