This title appears in the Scientific Report :
2007
Please use the identifier:
http://dx.doi.org/10.1016/j.tsf.2006.11.126 in citations.
Photodetectors based on amorphous and microcrystalline silicon
Photodetectors based on amorphous and microcrystalline silicon
p-i-n diodes based on amorphous and microcrystalline silicon are used for different applications like sensors or solar cells. However, their long-term stability and dynamic behavior are still under discussion. Therefore, the optical properties of both types of diodes were investigated by a comparati...
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Personal Name(s): | Stiebig, H. |
---|---|
Moulin, E. / Rech, B. | |
Contributing Institute: |
Photovoltaik; IEF-5 |
Published in: | Thin solid films, 515 (2007) S. 7522 - 7525 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2007
|
Physical Description: |
7522 - 7525 |
DOI: |
10.1016/j.tsf.2006.11.126 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Thin Solid Films
515 |
Subject (ZB): | |
Publikationsportal JuSER |
p-i-n diodes based on amorphous and microcrystalline silicon are used for different applications like sensors or solar cells. However, their long-term stability and dynamic behavior are still under discussion. Therefore, the optical properties of both types of diodes were investigated by a comparative study. The long-term stability of non-encapsulated devices was tested by means of light soaking, damp heat testing and high-temperature treatment of up to 2000 It. The dynamic properties of the thin-film silicon photodetectors were studied by measuring and analysing the admittance under different bias conditions. (c) 2007 Elsevier B.V. All rights reserved. |