This title appears in the Scientific Report :
2009
Please use the identifier:
http://hdl.handle.net/2128/17296 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.3240409 in citations.
Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/-Si:C/Si(100) substrates
Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/-Si:C/Si(100) substrates
In this letter we present a method to increase the efficiency of SiGe layer relaxation by He+ ion implantation and annealing. Preferential nucleation of He platelets along a delta-impurity layer grown in the Si substrate below the SiGe layer results in planar localization and homogenization of dislo...
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Personal Name(s): | Buca, B. |
---|---|
Minamisawa, R. A. / Trinkaus, H. / Holländer, B. / Nguyen, N. D. / Loo, R. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: | Applied physics letters, 95 (2009) S. 144103 |
Imprint: |
Melville, NY
American Institute of Physics
2009
|
Physical Description: |
144103 |
DOI: |
10.1063/1.3240409 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Applied Physics Letters
95 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.3240409 in citations.
In this letter we present a method to increase the efficiency of SiGe layer relaxation by He+ ion implantation and annealing. Preferential nucleation of He platelets along a delta-impurity layer grown in the Si substrate below the SiGe layer results in planar localization and homogenization of dislocation loop sources inducing a more uniform distribution of misfit dislocations. We demonstrate this for a thin Si: C layer grown by reduced pressure chemical vapor deposition. The optimization of the conditions for efficient relaxation and layer quality is studied with respect to the position of the Si: C layer and the process parameters. Relaxation degrees up to 85% are obtained for Si0.77Ge0.23 layers. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3240409] |