This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1016/j.mee.2009.01.054 in citations.
Resistively switching Pt/Spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography
Resistively switching Pt/Spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography
Resistively switching materials are in the focus of investigations for use in next-generation non-volatile resistive random access memories (RRAM). Crossbar structures with integrated resistively switching spin-on glass were fabricated using UV nanoimprint lithography. 32 x 32 bit crossbar arrays wi...
Saved in:
Personal Name(s): | Meier, M. |
---|---|
Gilles, S. / Rosezin, R. / Schindler, S. / Trellenkamp, S. / Rüdiger, A. / Mayer, D. / Kügeler, C. / Waser, R. | |
Contributing Institute: |
Elektronische Materialien; IFF-6 Prozesstechnologie; IBN-PT JARA-FIT; JARA-FIT Institut für Bio- und Nanosysteme - Bioelektronik; IBN-2 |
Published in: | Microelectronic engineering, 86 (2009) |
Imprint: |
[S.l.] @
Elsevier
2009
|
DOI: |
10.1016/j.mee.2009.01.054 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Microelectronic Engineering
86 |
Subject (ZB): | |
Publikationsportal JuSER |
Resistively switching materials are in the focus of investigations for use in next-generation non-volatile resistive random access memories (RRAM). Crossbar structures with integrated resistively switching spin-on glass were fabricated using UV nanoimprint lithography. 32 x 32 bit crossbar arrays with a half pitch of 50 nm were achieved. The switching characteristic of our Pt/spin-on glass/Ag material stack was proved on 100 x 100 nm(2) nanocells. It shows resistance switching behavior which is comparable to material systems where the formation and dissolution of metallic filaments through a porous matrix is assumed to be the responsible switching mechanism. (C) 2009 Elsevier B.V. All rights reserved. |