This title appears in the Scientific Report :
2007
Enhancement of the relaxation of SiGe layers by He ion implantaion using a Si(C) layer
Enhancement of the relaxation of SiGe layers by He ion implantaion using a Si(C) layer
Saved in:
Personal Name(s): | Buca, D. |
---|---|
Goryll, M. / Holländer, B. / Trinkaus, H. / Mantl, S. / Loo, R. / Nguyen, D. | |
Contributing Institute: |
Center of Nanoelectronic Systems for Information Technology; CNI Halbleiter-Nanoelektronik; IBN-1 |
Published in: |
Material Research Society (MRS) Spring Meeting |
Imprint: |
2007
|
Conference: | San Franscisco, CA 2007-04-09 |
Document Type: |
Talk (non-conference) |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |