Description: Investigation on Localized States in GaN Nanowires

This title appears in the Scientific Report : 2008

Investigation on Localized States in GaN Nanowires

GaN nanowires with diameters ranging between 50 and 500 nm were investigated by electrical and photoinduced current techniques to determine the influence of their size on the opto-electronic behavior of nanodevices. The conductivity, photoconductivity, and persistent photoconductivity behavior of Ga...

Personal Name(s):	Polenta, L.
	Rossi, M. / Cavallini, A. / Calarco, R. / Marso, M. / Meijers, R. / Richter, T. / Stoica, T. / Lüth, H.
Contributing Institute:	Halbleiter-Nanoelektronik; IBN-1 Center of Nanoelectronic Systems for Information Technology; CNI
Published in:	ACS nano, 2 (2008) S. 287 - 292
Imprint:	Washington, DC Soc. 2008
Physical Description:	287 - 292
DOI:	10.1021/nn700386w
PubMed ID:	19206629
Document Type:	Journal Article
Research Program:	Grundlagen für zukünftige Informationstechnologien
Series Title:	ACS Nano 2
Subject (ZB):	Crystallization: methods Electric Conductivity Electrochemistry: methods Gallium: chemistry Gallium: radiation effects Light Macromolecular Substances: chemistry Materials Testing Molecular Conformation Nanotechnology: methods Nanotubes: chemistry Nanotubes: ultrastructure Particle Size Photochemistry: methods Surface Properties Macromolecular Substances gallium nitride Gallium J nanowires spectral photoconductivity yellow band
	Publikationsportal JuSER

Please use the identifier: http://dx.doi.org/10.1021/nn700386w in citations.

GaN nanowires with diameters ranging between 50 and 500 nm were investigated by electrical and photoinduced current techniques to determine the influence of their size on the opto-electronic behavior of nanodevices. The conductivity, photoconductivity, and persistent photoconductivity behavior of GaN nanowires are observed to strongly depend on the wire diameter. In particular, by spectral photoconductivity measurements, three main sub-band-gap optoelectronic transitions were detected, ascribed to the localized states giving rise to the characteristic blue, green, and yellow bands of GaN. Photoconductivity with below-band-gap excitation varies orders of magnitude with the wire diameter, similarly to that observed for near-band-edge excitation. Moreover, yellow-band-related signal shows a superlinear behavior with respect to the band-edge signal, offering new information for the modeling of the carrier recombination mechanism along the nanowires. The photoconductivity results agree well with a model which takes into account a uniform distribution of the localized states inside the wire and their direct recombination with the electrons in the conduction band.