This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1088/0957-4484/20/46/465402 in citations.
Gate-controlled Quantum collimation in nanocolumn resonant tunnelling transistors
Gate-controlled Quantum collimation in nanocolumn resonant tunnelling transistors
Nanoscaled resonant tunneling transistors (RTT) based on MBE-grown GaAs/AlAs double-barrier quantum well (DBQW) structures have been fabricated by a top-down approach using electron-beam lithographic definition of the vertical nanocolumns. In the preparation process, a reproducible mask alignment ac...
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Personal Name(s): | Wensorra, J. |
---|---|
Lepsa, M. I. / Trellenkamp, S. / Moers, J. / Indlekofer, K. M. / Lüth, H. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 Prozesstechnologie; IBN-PT JARA-FIT; JARA-FIT |
Published in: | Nanotechnology, 20 (2009) S. 465402 |
Imprint: |
Bristol
IOP Publ.
2009
|
Physical Description: |
465402 |
PubMed ID: |
19844000 |
DOI: |
10.1088/0957-4484/20/46/465402 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Nanotechnology
20 |
Subject (ZB): | |
Publikationsportal JuSER |
Nanoscaled resonant tunneling transistors (RTT) based on MBE-grown GaAs/AlAs double-barrier quantum well (DBQW) structures have been fabricated by a top-down approach using electron-beam lithographic definition of the vertical nanocolumns. In the preparation process, a reproducible mask alignment accuracy of below 10 nm has been achieved and the all-around metal gate at the level of the DBQW structure has been positioned at a distance of about 20 nm relative to the semiconductor nanocolumn. Due to the specific doping profile n++/i/n++ along the transistor nanocolumn, a particular confining potential is established for devices with diameters smaller than 70 nm, which causes a collimation effect of the propagating electrons. Under these conditions, room temperature optimum performance of the nano-RTTs is achieved with peak-to-valley current ratios above 2 and a peak current swing factor of about 6 for gate voltages between -6 and +6 V. These values indicate that our nano-RTTs can be successfully used in low power fast nanoelectronic circuits. |