This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevLett.102.076601 in citations.
Please use the identifier: http://hdl.handle.net/2128/7220 in citations.
Magnetoresistance in double spin filter tunnel junctions with nonmagnetic electrodes and its unconventional bias dependence
Magnetoresistance in double spin filter tunnel junctions with nonmagnetic electrodes and its unconventional bias dependence
Spin filtering happens due to the discriminative tunneling probabilities for spin-up and spin-down electrons through a magnetic barrier and can result in highly spin polarized tunnel currents. Combining two such barriers in a tunnel junction thus leads to large magnetoresistance without the necessit...
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Personal Name(s): | Miao, Guo-Xing |
---|---|
Müller, M. / Moodera, J.S. | |
Contributing Institute: |
Elektronische Eigenschaften; IFF-9 |
Published in: | Physical review letters, 102 (2009) S. 076601 |
Imprint: |
College Park, Md.
APS
2009
|
Physical Description: |
076601 |
DOI: |
10.1103/PhysRevLett.102.076601 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physical Review Letters
102 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/7220 in citations.
Spin filtering happens due to the discriminative tunneling probabilities for spin-up and spin-down electrons through a magnetic barrier and can result in highly spin polarized tunnel currents. Combining two such barriers in a tunnel junction thus leads to large magnetoresistance without the necessity of magnetic electrodes. We demonstrate the realization of such unconventional tunnel junctions using double EuS spin filter barriers with Al electrodes. The novel nonmonotonic and asymmetric bias behavior in magnetoresistance can be qualitatively modeled in the framework of WKB approximations. |