This title appears in the Scientific Report :
2009
Please use the identifier:
http://hdl.handle.net/2128/17231 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.3063673 in citations.
Thickness dependence of ferromagnetic- and metal-insulator transition in thin EuO films
Thickness dependence of ferromagnetic- and metal-insulator transition in thin EuO films
We have studied the thickness dependence of the magnetic and transport properties of thin EuO films in the range of 10-60 angstrom. The ferromagnetic phase transition shows a systematic dependence of the critical temperature T-c with decreasing EuO film thickness. This behavior has been attributed t...
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Personal Name(s): | Müller, M. |
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Miao, G.-X. / Moodera, J.S. | |
Contributing Institute: |
Elektronische Eigenschaften; IFF-9 |
Published in: | Journal of applied physics, 105 (2009) S. 07C917 |
Imprint: |
Melville, NY
American Institute of Physics
2009
|
Physical Description: |
07C917 |
DOI: |
10.1063/1.3063673 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Applied Physics
105 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.3063673 in citations.
We have studied the thickness dependence of the magnetic and transport properties of thin EuO films in the range of 10-60 angstrom. The ferromagnetic phase transition shows a systematic dependence of the critical temperature T-c with decreasing EuO film thickness. This behavior has been attributed to the interface layers which play a major role by reducing the number of average magnetic neighbors; we find the effect of interface intermixing becoming relevant in low thickness regime. In addition, we could identify a clear dependence of the onset of the metal-to-insulator transition on the ferromagnetic ordering of thin EuO films. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3063673] |