This title appears in the Scientific Report :
2008
Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration
Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration
Saved in:
Personal Name(s): | Sandow, C. |
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Knoch, J. / Urban, C. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: |
Proceeding of the Device Research Conference 2008, DRC 2008, Santa Barbara, pp. 79 - 80 |
Imprint: |
2008
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Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |