This title appears in the Scientific Report :
2009
Schottky-barrier height tuning og Ni and Pt germanide/n-Ge contacts using dopant segregation
Schottky-barrier height tuning og Ni and Pt germanide/n-Ge contacts using dopant segregation
Saved in:
Personal Name(s): | Müller, M. |
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Zhao, Q. T. / Urban, C. / Sandow, C. / Breuer, U. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: |
Proceedings of the 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008, ICSICT 2008, Beijing. - S. 153 - 156 |
Imprint: |
2009
|
Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |