This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1016/j.sse.2009.05.009 in citations.
Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors
Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors
We present experimental studies on the performance of ultra-thin body SOI tunnel FETs depending on channel length, gate oxide thickness and source/drain doping concentrations. Electrical measurements show no dependance on channel length, however, a strong dependance on gate oxide thickness and dopin...
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Personal Name(s): | Sandow, C. |
---|---|
Knoch, J. / Urban, C. / Zhao, Q. T. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: | Solid state electronics, 53 (2009) S. 1126 - 1129 |
Imprint: |
Oxford [u.a.]
Pergamon, Elsevier Science
2009
|
Physical Description: |
1126 - 1129 |
DOI: |
10.1016/j.sse.2009.05.009 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Solid-State Electronics
53 |
Subject (ZB): | |
Publikationsportal JuSER |
We present experimental studies on the performance of ultra-thin body SOI tunnel FETs depending on channel length, gate oxide thickness and source/drain doping concentrations. Electrical measurements show no dependance on channel length, however, a strong dependance on gate oxide thickness and doping concentration is found. Our experimental results match calculations based on a simple Landauer model employing the Wenzel-Kramer-Brillouin approximation for the tunneling process. Bandgap narrowing and the electrostatics of the tunneling junction are found to be the main factors impacting the on-state performance of the tunnel FET. (C) 2009 Elsevier Ltd. All rights reserved. |