This title appears in the Scientific Report :
2009
Group III element-assisred MBE grown GaAs and InAs nanowires
Group III element-assisred MBE grown GaAs and InAs nanowires
Saved in:
Personal Name(s): | Lepsa, M. I. |
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Heiderich, S. / Alagha, S. / Weis, K. / Estévez Hernández, S. / Schäpers, T. / Grützmacher, D. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: |
15th European Molecular Beam Epitaxy Workshop |
Imprint: |
2009
|
Conference: | Zakopane, Polen 2009-03-08 |
Document Type: |
Poster |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |