This title appears in the Scientific Report :
2008
Please use the identifier:
http://dx.doi.org/10.1109/TDMR.2008.2001684 in citations.
AlGaN/GaN High Electron Mobility Transistor Structures: Self-Heating Effect and Performance Degradation
AlGaN/GaN High Electron Mobility Transistor Structures: Self-Heating Effect and Performance Degradation
This paper reports on the results of the experimental and numerical investigation into the self-heating effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates. It shows that temperature increase has an opposite dependence on the buffer thickness for sapphire and SiC substrates. No...
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Personal Name(s): | Vitusevich, S. A. |
---|---|
Kurakin, A. M. / Klein, N. / Petrychuk, M. V. / Naumov, A. V. / Belyaev, A. E. | |
Contributing Institute: |
Institut für Bio- und Nanosysteme - Bioelektronik; IBN-2 JARA-FIT; JARA-FIT |
Published in: | IEEE transactions on device and materials reliability, 8 (2008) S. 543 - 548 |
Imprint: |
New York, NY
IEEE
2008
|
Physical Description: |
543 - 548 |
DOI: |
10.1109/TDMR.2008.2001684 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
IEEE Transactions on Device and Materials Reliability
8 |
Subject (ZB): | |
Publikationsportal JuSER |
This paper reports on the results of the experimental and numerical investigation into the self-heating effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates. It shows that temperature increase has an opposite dependence on the buffer thickness for sapphire and SiC substrates. Noise spectroscopy is also used to monitor the self-heating effect. Moreover, it is shown that the room-temperature spectra can be used to determine the activation energy of the traps. An irreversible improvement in mobility and quantum scattering time is registered after the irradiation of AlGaN/GaN heterostructures at a total dose of 1 x 10(6) rad of Co-60 gamma rays. |