This title appears in the Scientific Report :
2016
Please use the identifier:
http://dx.doi.org/10.1002/pssa.201533024 in citations.
Light management in planar silicon heterojunction solar cells via nanocrystalline silicon oxide films and nano-imprint textures
Light management in planar silicon heterojunction solar cells via nanocrystalline silicon oxide films and nano-imprint textures
In order to increase the efficiency of high performance silicon heterojunction solar cells even further, it is paramount to increase the photoelectric current by enhancing the amount of light being captured within the absorber. Therefore, to reduce the parasitic absorption in the other layers, optoe...
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Personal Name(s): | Richter, Alexei (Corresponding author) |
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Lentz, Florian / Meier, Matthias / Finger, Friedhelm / Ding, Kaining | |
Contributing Institute: |
Photovoltaik; IEK-5 |
Published in: | Physica status solidi / A, 213 (2016) 7, S. 1976 - 1982 |
Imprint: |
Weinheim
Wiley-VCH
2016
|
DOI: |
10.1002/pssa.201533024 |
Document Type: |
Journal Article |
Research Program: |
Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC) Solar cells of the next generation |
Publikationsportal JuSER |
In order to increase the efficiency of high performance silicon heterojunction solar cells even further, it is paramount to increase the photoelectric current by enhancing the amount of light being captured within the absorber. Therefore, to reduce the parasitic absorption in the other layers, optoelectronically favorable hydrogenated nanocrystalline silicon oxide films can substitute the commonly used hydrogenated amorphous silicon layers. In this work, we systematically investigate the combination of hydrogenated nanocrystalline silicon oxide and front side nano-imprint textures as anti-reflection layers in silicon heterojunction solar cells. Ultimately, we were able to tune the parasitic absorption via variation of the front surface field layer and enhance the short-circuit current of the planar solar cells by about 2 mA cm−2 due to a random silicon pyramid textured imprint layer. A maximum active area efficiency of 20.4% was achieved with a short-circuit current of 37.7 mA cm−2. |