This title appears in the Scientific Report :
2016
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevApplied.5.054010 in citations.
Please use the identifier: http://hdl.handle.net/2128/11986 in citations.
Impact of Tunnel-Barrier Strength on Magnetoresistance in Carbon Nanotubes
Impact of Tunnel-Barrier Strength on Magnetoresistance in Carbon Nanotubes
We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both thetemperature and bias-voltage dependence clearly indicate tunneling magnetoresistance as the origin. Weshow that this effect is significantly affected by the tunnel-barrier strength, which appears to be...
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Personal Name(s): | Morgan, Caitlin |
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Misiorny, Maciej / Metten, Dominik / Heedt, Sebastian / Schäpers, Thomas / Schneider, Claus M. / Meyer, Carola (Corresponding author) | |
Contributing Institute: |
JARA-FIT; JARA-FIT Theoretische Nanoelektronik; PGI-2 Halbleiter-Nanoelektronik; PGI-9 Elektronische Eigenschaften; PGI-6 |
Published in: | Physical review applied, 5 (2016) 5, S. 054010 |
Imprint: |
College Park, Md. [u.a.]
American Physical Society
2016
|
DOI: |
10.1103/PhysRevApplied.5.054010 |
Document Type: |
Journal Article |
Research Program: |
Controlling Spin-Based Phenomena |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/11986 in citations.
We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both thetemperature and bias-voltage dependence clearly indicate tunneling magnetoresistance as the origin. Weshow that this effect is significantly affected by the tunnel-barrier strength, which appears to be one reasonfor the variation between devices previously detected in similar structures. Modeling the data by means ofthe scattering matrix approach, we find a nontrivial dependence of the magnetoresistance on the barrierstrength. Furthermore, an analysis of the spin precession observed in a nonlocal Hanle measurement yieldsa spin lifetime of tau_s= 1.1 ns, a value comparable with those found in silicon- or graphene-based spin-valvedevices. |