This title appears in the Scientific Report :
2016
Please use the identifier:
http://dx.doi.org/10.1557/adv.2016.347 in citations.
Single-trap kinetic in Si nanowire FETs: effect of gamma radiation treatment
Single-trap kinetic in Si nanowire FETs: effect of gamma radiation treatment
Here we report on the effect of gamma radiation treatment on transport properties and single-trap kinetics in Si nanowire (NW) field effect transistor (FET) structures. We used noise spectroscopy as a powerful method for advanced physical characterization of nanoscale devices. Our results demonstrat...
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Personal Name(s): | Zadorozhnyi, Ihor |
---|---|
Li, J. / Pud, Sergii / Petrychuk, Michael / Vitusevich, Svetlana (Corresponding author) | |
Contributing Institute: |
JARA-FIT; JARA-FIT Bioelektronik; PGI-8 |
Published in: | MRS advances, 1 (2016) 56, S. 3755-3760 |
Imprint: |
Cambridge
Cambridge University Press
2016
|
DOI: |
10.1557/adv.2016.347 |
Document Type: |
Journal Article |
Research Program: |
Controlling Configuration-Based Phenomena |
Publikationsportal JuSER |
Here we report on the effect of gamma radiation treatment on transport properties and single-trap kinetics in Si nanowire (NW) field effect transistor (FET) structures. We used noise spectroscopy as a powerful method for advanced physical characterization of nanoscale devices. Our results demonstrate that transport properties of NW FETs can be changed using small doses of gamma radiation treatment. We reveal an enhancement of the gate coupling effect, which is explained as a result of the reorganization of the native defect structure after treatment. The radiation treatment approach allows the single-trap dynamic to be changed, which opens up prospects for a number of fundamental studies and applications of Si NW FET device structures, including biosensors. |