This title appears in the Scientific Report :
2016
Please use the identifier:
http://dx.doi.org/10.1134/S1063785016060286 in citations.
The temperature dependence of the resistivity of ohmic contacts based on Gallium Arsenid and Indium Phosphide in the 4.2-300K range
The temperature dependence of the resistivity of ohmic contacts based on Gallium Arsenid and Indium Phosphide in the 4.2-300K range
Resistivity ρc of InP- and GaAs-based ohmic contacts has been measured in a temperature range of 4.2–300 K. Both temperature dependences are nonmonotonic and exhibit minima at T = 50 K for InP and T = 150 K for GaAs. The nonmonotonic ρc(T) curves for GaAs contacts have been observed for the first ti...
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Personal Name(s): | Sachenko (Corresponding author) |
---|---|
Belyaev / Boltovets / Konakova / Vitusevich, Svetlana / Novitskii / Sheremet / Pilipchuk | |
Contributing Institute: |
JARA-FIT; JARA-FIT Bioelektronik; PGI-8 |
Published in: | Technical physics letters, 42 (2016) 6, S. 649-651 |
Imprint: |
Berlin
Springer Science + Business Media
2016
|
DOI: |
10.1134/S1063785016060286 |
Document Type: |
Journal Article |
Research Program: |
Controlling Configuration-Based Phenomena |
Publikationsportal JuSER |
Resistivity ρc of InP- and GaAs-based ohmic contacts has been measured in a temperature range of 4.2–300 K. Both temperature dependences are nonmonotonic and exhibit minima at T = 50 K for InP and T = 150 K for GaAs. The nonmonotonic ρc(T) curves for GaAs contacts have been observed for the first time. The obtained experimental temperature dependences of ρc can be explained in the framework of the mechanism of current passage via metal shunts incorporated into semiconductor with allowance for electrons freezing out at liquid-helium temperatures. The ohmic character of contacts is ensured due to limitation of the electron current by diffusion supply in the presence of band bending at the semiconductor–metal interface near the shunt edge. |