This title appears in the Scientific Report :
2016
Please use the identifier:
http://dx.doi.org/10.1063/1.4960704 in citations.
Please use the identifier: http://hdl.handle.net/2128/17053 in citations.
Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties
Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties
The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p+-p-p+ field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and detectivity are analyzed over a wide spectrum range. The absorbance of p-Si NW shifts to the short wavelength...
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Personal Name(s): | Gasparyan, F. |
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Khondkaryan, H. / Arakelyan, A. / Zadorozhnyi, I. / Pud, S. / Vitusevich, Svetlana (Corresponding author) | |
Contributing Institute: |
JARA-FIT; JARA-FIT Bioelektronik; PGI-8 |
Published in: | Journal of applied physics, 120 (2016) 6, S. 064902 -1-8 |
Imprint: |
Melville, NY
American Inst. of Physics
2016
|
DOI: |
10.1063/1.4960704 |
Document Type: |
Journal Article |
Research Program: |
Controlling Configuration-Based Phenomena |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/17053 in citations.
The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p+-p-p+ field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and detectivity are analyzed over a wide spectrum range. The absorbance of p-Si NW shifts to the short wavelength region compared with bulk Si. The photocurrent and photosensitivity reach increased values in the UV range of the spectrum at 300 K. It is shown that sensitivity values can be tuned by the drain-source voltage and may reach record values of up to 2–4 A/W at a wavelength of 300 nm at room temperature. Low-frequency noise studies allow calculating the photodetectivity values, which increase with decreasing wavelength down to 300 nm. We show that the drain current of Si NW biochemical sensors substantially depends on pH value and the signal-to-noise ratio reaches the high value of 105. Increasing pH sensitivity with gate voltage is revealed for certain source-drain currents of pH-sensors based on Si NW FETs. The noise characteristic index decreases from 1.1 to 0.7 with the growth of the liquid gate voltage. Noise behavior is successfully explained in the framework of the correlated number-mobility unified fluctuation model. pH sensitivity increases as a result of the increase in liquid gate voltage, thus giving the opportunity to measure very low proton concentrations in the electrolyte medium at certain values of the liquid gate voltage. |