This title appears in the Scientific Report :
2016
Strain Induced insulator-conductor transition in epitaxial SrTiO3 films
Strain Induced insulator-conductor transition in epitaxial SrTiO3 films
The metal-insulator transition temperature of SrTiO3 films grown on single crystalline DyScO3 (110), TbScO3 (110), and GdScO3 (110) substrates is tuned by the lattice-mismatch epitaxial strain. X-ray diffraction measurements demonstrate that all films are grown epitaxially. A systematic variation in...
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Personal Name(s): | Dai, Yang |
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Schubert, Jürgen / Wördenweber, Roger | |
Contributing Institute: |
Bioelektronik; PGI-8 Halbleiter-Nanoelektronik; PGI-9 JARA-FIT; JARA-FIT |
Imprint: |
2016
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Conference: | International Conference on: Nano confined superconductors and their application, Garmisch-Partenkirchen (Germany), 2016-09-03 - 2016-09-07 |
Document Type: |
Poster |
Research Program: |
Controlling Configuration-Based Phenomena |
Publikationsportal JuSER |
The metal-insulator transition temperature of SrTiO3 films grown on single crystalline DyScO3 (110), TbScO3 (110), and GdScO3 (110) substrates is tuned by the lattice-mismatch epitaxial strain. X-ray diffraction measurements demonstrate that all films are grown epitaxially. A systematic variation in the electrical transport properties has been observed with the change in the lattice mismatch between films and various substrates. It is shown that by a proper selection of mismatch between 0 to 1.6 % range of this study) and thickness between 5 to 200 nm of films, it is possible to control and precisely tune the metal-insulator transition temperature to a desired value, i.e. from 10 to 300 K. We demonstrate electrically switchable resistance using planar electrodes with 200-1000 nm distance. The electronic transport experimental results show an anisotropy transport for the anisotropically strained films. This confirms that the anisotropic misfit induced two in-plane phases have different behaviors that is highly directionally-dependent. Our results might be of importance for applications in storage, memory, and even artificial synaptic devices for neuromorphic computing. |