This title appears in the Scientific Report :
2017
Please use the identifier:
http://dx.doi.org/10.1002/smll.201603321 in citations.
Please use the identifier: http://hdl.handle.net/2128/18661 in citations.
SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters
SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters
SiGeSn ternaries are grown on Ge-buffered Si wafers incorporating Si or Sn contents of up to 15 at%. The ternaries exhibit layer thicknesses up to 600 nm, while maintaining a high crystalline quality. Tuning of stoichiometry and strain, as shown by means of absorption measurements, allows bandgap en...
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Personal Name(s): | von den Driesch, Nils (Corresponding author) |
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Stange, Daniela / Wirths, Stephan / Rainko, Denis / Povstugar, Ivan / Savenko, Aleksei / Breuer, Uwe / Geiger, Richard / Sigg, Hans / Ikonic, Zoran / Hartmann, Jean-Michel / Grützmacher, Detlev / Mantl, Siegfried / Buca, Dan Mihai (Corresponding author) | |
Contributing Institute: |
Analytik; ZEA-3 JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Small, 13 (2017) 16, S. 1603321 |
Imprint: |
Weinheim
Wiley-VCH
2017
|
PubMed ID: |
28160408 |
DOI: |
10.1002/smll.201603321 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
Restricted Restricted OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/18661 in citations.
SiGeSn ternaries are grown on Ge-buffered Si wafers incorporating Si or Sn contents of up to 15 at%. The ternaries exhibit layer thicknesses up to 600 nm, while maintaining a high crystalline quality. Tuning of stoichiometry and strain, as shown by means of absorption measurements, allows bandgap engineering in the short-wave infrared range of up to about 2.6 µm. Temperature-dependent photoluminescence experiments indicate ternaries near the indirect-to-direct bandgap transition, proving their potential for ternary-based light emitters in the aforementioned optical range. The ternaries' layer relaxation is also monitored to explore their use as strain-relaxed buffers, since they are of interest not only for light emitting diodes investigated in this paper but also for many other optoelectronic and electronic applications. In particular, the authors have epitaxially grown a GeSn/SiGeSn multiquantum well heterostructure, which employs SiGeSn as barrier material to efficiently confine carriers in GeSn wells. Strong room temperature light emission from fabricated light emitting diodes proves the high potential of this heterostructure approach. |