This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1002/pssr.200903052 in citations.
Insulator-semiconductor-metallic state transition induced by electric fields in Mn-doped NaNbO3
Insulator-semiconductor-metallic state transition induced by electric fields in Mn-doped NaNbO3
The electro-forming procedure was applied to NaNbO3: Mn and NaNbO3 insulator crystals. The electric current flow induced a transition to the metallic-type temperature dependence of the resistance. The Mn dopant shortened the time needed for the transition. The LC-AFM measurement showed a non-homogen...
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Personal Name(s): | Molak, A. |
---|---|
Szot, K. | |
Contributing Institute: |
Elektronische Materialien; IFF-6 JARA-FIT; JARA-FIT |
Published in: | Physica status solidi / Rapid research letters, 3 (2009) S. 127 - 129 |
Imprint: |
Weinheim
Wiley-VCH
2009
|
Physical Description: |
127 - 129 |
DOI: |
10.1002/pssr.200903052 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physica Status Solidi - Rapid Research Letters
3 |
Subject (ZB): | |
Publikationsportal JuSER |
The electro-forming procedure was applied to NaNbO3: Mn and NaNbO3 insulator crystals. The electric current flow induced a transition to the metallic-type temperature dependence of the resistance. The Mn dopant shortened the time needed for the transition. The LC-AFM measurement showed a non-homogeneous distribution in local resistance resulting from the electric field via the AFM tip. We ascribe this effect to percolation in the network of the highly conducting filaments, whose formation is facilitated by the Mn ions. We conclude that the insulator-metal transition is induced within a subsystem of extended defects already existing in the NaNbO3 : Mn crystal lattice host. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim |