This title appears in the Scientific Report :
2017
Please use the identifier:
http://dx.doi.org/10.1038/ncomms11570 in citations.
Please use the identifier: http://hdl.handle.net/2128/14108 in citations.
Correspondence: On the nature of strong piezoelectricity in graphene on SiO$_{2}$
Correspondence: On the nature of strong piezoelectricity in graphene on SiO$_{2}$
Spatially resolved Raman spectroscopy and piezoresponse force microscopy are very interesting and useful tools for investigating properties of graphene and other two-dimensional materials. In a recent article published in Nature Communications, da Cunha Rodrigues et al.1 used both methods to investi...
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Personal Name(s): | Stampfer, Christoph (Corresponding author) |
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Reichardt, Sven | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Nature Communications, 7 (2016) S. 11570 - |
Imprint: |
London
Nature Publishing Group
2016
|
DOI: |
10.1038/ncomms11570 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/14108 in citations.
Spatially resolved Raman spectroscopy and piezoresponse force microscopy are very interesting and useful tools for investigating properties of graphene and other two-dimensional materials. In a recent article published in Nature Communications, da Cunha Rodrigues et al.1 used both methods to investigate single-layer graphene deposited on SiO2 grating substrates. Interestingly, the authors report on strong piezoelectricity and on high in-plane strain values of 3–5% in the supported graphene regions. It is argued that the in-plane strain originates from the strong interaction of the carbon atoms with the oxygen atoms of the SiO2 substrate. Their finding of high in-plane strain is crucial, as it is considered to be of the same origin as the observed strong piezoelectricity in graphene on SiO2. Unfortunately however, a major correction is needed. The strain values reported by da Cunha Rodrigues et al. appear to be more than a factor 50 too large, that is, the actual strain in their investigated samples is only on the order of 0.06–0.10% or lower. |