This title appears in the Scientific Report :
2017
Please use the identifier:
http://dx.doi.org/10.1021/acs.nanolett.5b04840 in citations.
Please use the identifier: http://hdl.handle.net/2128/22756 in citations.
Ballistic Transport Exceeding 28 μm in CVD Grown Graphene
Ballistic Transport Exceeding 28 μm in CVD Grown Graphene
We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm2/(...
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Personal Name(s): | Banszerus, Luca |
---|---|
Schmitz, Michael / Engels, Stephan / Goldsche, Matthias / Watanabe, Kenji / Taniguchi, Takashi / Beschoten, Bernd / Stampfer, Christoph (Corresponding author) | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Nano letters, 16 (2016) 2, S. 1387 - 1391 |
Imprint: |
Washington, DC
ACS Publ.
2016
|
PubMed ID: |
26761190 |
DOI: |
10.1021/acs.nanolett.5b04840 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
Restricted Restricted OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/22756 in citations.
We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm2/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature-dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K. |