This title appears in the Scientific Report :
2017
Overcoming the RESET Limitation in Tantalum Oxide-Based ReRAM using and Oxygen Blocking Layer
Overcoming the RESET Limitation in Tantalum Oxide-Based ReRAM using and Oxygen Blocking Layer
Saved in:
Personal Name(s): | Schönhals, A. |
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Kindsmüller, A. / La Torre, C. / Zhang, Hehe / Hoffmann-Eifert, Susanne / Menzel, Stephan / Waser, R. / Wouters, D. J. | |
Contributing Institute: |
Elektronische Materialien; PGI-7 |
Imprint: |
2017
|
Conference: | 2017 IEEE International Memory Workshop, Monterey (USA), 2017-05-14 - 2017-05-17 |
Document Type: |
Conference Presentation |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
Description not available. |