This title appears in the Scientific Report :
2017
Please use the identifier:
http://dx.doi.org/10.1109/IMW.2017.7939096 in citations.
Overcoming the RESET Limitation in Tantalum Oxide-Based ReRAM Using an Oxygen-Blocking Layer
Overcoming the RESET Limitation in Tantalum Oxide-Based ReRAM Using an Oxygen-Blocking Layer
Saved in:
Personal Name(s): | Schonhals, Alexander |
---|---|
Kindsmuller, Andreas / La Torre, Camilla / Zhang, Hehe / Hoffmann-Eifert, Susanne / Menzel, Stephan / Waser, R. / Wouters, Dirk J. | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA-FIT; JARA-FIT JARA Institut Green IT; PGI-10 |
Imprint: |
IEEE
2017
|
Physical Description: |
15 |
DOI: |
10.1109/IMW.2017.7939096 |
Conference: | 2017 IEEE International Memory Workshop (IMW), Monterey (CA, USA), 2017-05-14 - 2017-05-17 |
Document Type: |
Contribution to a conference proceedings |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
Description not available. |