This title appears in the Scientific Report :
2017
Please use the identifier:
http://dx.doi.org/10.1002/aelm.201600490 in citations.
Please use the identifier: http://hdl.handle.net/2128/22958 in citations.
Semiconductor-to-Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons2
Semiconductor-to-Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons2
A semiconductor-to-metal transition in N = 7 armchair graphene nanoribbons causes drastic changes in its electron and phonon system. By using angle-resolved photoemission spectroscopy of lithium-doped graphene nanoribbons, a quasiparticle band gap renormalization from 2.4 to 2.1 eV is observed. Reac...
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Personal Name(s): | Senkovskiy, Boris V. (Corresponding author) |
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Fedorov, Alexander V. / Haberer, Danny / Farjam, Mani / Simonov, Konstantin A. / Preobrajenski, Alexei B. / Mårtensson, Niels / Atodiresei, Nicolae / Caciuc, Vasile / Blügel, Stefan / Rosch, Achim / Verbitskiy, Nikolay I. / Hell, Martin / Evtushinsky, Daniil V. / German, Raphael / Marangoni, Tomas / van Loosdrecht, Paul H. M. / Fischer, Felix R. (Corresponding author) / Grüneis, Alexander (Corresponding author) | |
Contributing Institute: |
Quanten-Theorie der Materialien; IAS-1 JARA - HPC; JARA-HPC JARA-FIT; JARA-FIT Quanten-Theorie der Materialien; PGI-1 |
Published in: | Advanced electronic materials, 3 (2017) 4, S. 1600490 |
Imprint: |
Chichester
Wiley
2017
|
DOI: |
10.1002/aelm.201600490 |
Document Type: |
Journal Article |
Research Program: |
Controlling Configuration-Based Phenomena Controlling Spin-Based Phenomena |
Link: |
Restricted Restricted OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/22958 in citations.
A semiconductor-to-metal transition in N = 7 armchair graphene nanoribbons causes drastic changes in its electron and phonon system. By using angle-resolved photoemission spectroscopy of lithium-doped graphene nanoribbons, a quasiparticle band gap renormalization from 2.4 to 2.1 eV is observed. Reaching high doping levels (0.05 electrons per atom), it is found that the effective mass of the conduction band carriers increases to a value equal to the free electron mass. This giant increase in the effective mass by doping is a means to enhance the density of states at the Fermi level which can have palpable impact on the transport and optical properties. Electron doping also reduces the Raman intensity by one order of magnitude, and results in relatively small (4 cm−1) hardening of the G phonon and softening of the D phonon. This suggests the importance of both lattice expansion and dynamic effects. The present work highlights that doping of a semiconducting 1D system is strikingly different from its 2D or 3D counterparts and introduces doped graphene nanoribbons as a new tunable quantum material with high potential for basic research and applications. |