This title appears in the Scientific Report :
2017
Please use the identifier:
http://hdl.handle.net/2128/15912 in citations.
Please use the identifier: http://dx.doi.org/10.1021/acs.nanolett.7b00627 in citations.
Direct Observation of the Band Gap Transition in Atomically Thin ReS2
Direct Observation of the Band Gap Transition in Atomically Thin ReS2
ReS2 is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of this van der Waals compound leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating mate...
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Personal Name(s): | Gehlmann, Mathias |
---|---|
Aguilera, Irene / Bihlmayer, Gustav / Nemšák, Slavomír / Nagler, Philipp / Gospodarič, Pika / Zamborlini, Giovanni / Eschbach, Markus / Feyer, Vitaliy / Kronast, Florian / Młyńczak, Ewa / Korn, Tobias / Plucinski, Lukasz (Corresponding author) / Schüller, Christian / Blügel, Stefan / Schneider, Claus M. | |
Contributing Institute: |
Quanten-Theorie der Materialien; IAS-1 Elektronische Eigenschaften; PGI-6 JARA - HPC; JARA-HPC JARA-FIT; JARA-FIT Quanten-Theorie der Materialien; PGI-1 |
Published in: | Nano letters, 17 (2017) 9, S. 5187 - 5192 |
Imprint: |
Washington, DC
ACS Publ.
2017
|
PubMed ID: |
28759250 |
DOI: |
10.1021/acs.nanolett.7b00627 |
Document Type: |
Journal Article |
Research Program: |
Controlling Configuration-Based Phenomena Controlling Spin-Based Phenomena |
Link: |
Restricted OpenAccess Restricted OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1021/acs.nanolett.7b00627 in citations.
ReS2 is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of this van der Waals compound leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic structure of monolayer, bilayer, and bulk ReS2 using k-space photoemission microscopy in combination with first-principles calculations. We demonstrate that the valence electrons in bulk ReS2 are—contrary to assumptions in recent literature—significantly delocalized across the van der Waals gap. Furthermore, we directly observe the evolution of the valence band dispersion as a function of the number of layers, revealing the transition from an indirect band gap in bulk ReS2 to a direct gap in the bilayer and the monolayer. We also find a significantly increased effective hole mass in single-layer crystals. Our results establish bilayer ReS2 as an advantageous building block for two-dimensional devices and van der Waals heterostructures. |