This title appears in the Scientific Report :
2017
Modelling of Resistive Switching Devices based on the Valence Change Mechanism
Modelling of Resistive Switching Devices based on the Valence Change Mechanism
Saved in:
Personal Name(s): | Menzel, Stephan |
---|---|
Funck, Carsten / La Torre, C. / Marchewka, A. / Fleck, K. / Bäumer, Christoph / Rana, Vikas / Hoffmann-Eifert, Susanne / Dittmann, Regina / Waser, R. | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA-FIT; JARA-FIT |
Imprint: |
2017
|
Conference: | Non-volatile Memory Technology Symposium, Aachen (Germany), 2017-08-30 - 2017-09-01 |
Document Type: |
Conference Presentation |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
Description not available. |