This title appears in the Scientific Report :
2017
Please use the identifier:
http://hdl.handle.net/2128/15716 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevMaterials.1.054001 in citations.
Engineering of optical and electronic band gaps in transition metal dichalcogenide monolayers through external dielectric screening
Engineering of optical and electronic band gaps in transition metal dichalcogenide monolayers through external dielectric screening
Heterojunctions are the backbone of established semiconductor technology. The highly desirable reliablecreation of dielectrically defined heterojunctions in transition metal dichalcogenide monolayers (TMD-MLs)requires an in-depth understanding of dielectric screening effects induced by the ML’s envi...
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Personal Name(s): | Borghardt, Sven (Corresponding author) |
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Tu, Jhih-Sian / Winkler, Florian / Schubert, Jürgen / Zander, Willi / Leosson, Kristjan / Kardynal, Beata | |
Contributing Institute: |
Mikrostrukturforschung; PGI-5 Physik Nanoskaliger Systeme; ER-C-1 JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Physical review materials, 1 (2017) 5, S. 054001 |
Imprint: |
College Park, MD
APS
2017
|
DOI: |
10.1103/PhysRevMaterials.1.054001 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevMaterials.1.054001 in citations.
Heterojunctions are the backbone of established semiconductor technology. The highly desirable reliablecreation of dielectrically defined heterojunctions in transition metal dichalcogenide monolayers (TMD-MLs)requires an in-depth understanding of dielectric screening effects induced by the ML’s environment. Here wereport on the modulations of excitonic transitions in TMD-MLs through the effect of dielectric environmentsincluding low-k and high-k dielectric materials. We present absolute tuning ranges as large as 37 meV for theoptical band gaps of WSe2 andMoSe2 MLs and relative tuning ranges on the order of 15% for the binding energiesof charged excitons. Additionally, wemeasure relative changes of 30% in the energy splittings of exciton Rydbergstates of WSe2. The findings enable us to estimate changes in the exciton binding energies and the electronicband gaps of the studied materials. |