APA Citation

Aslam, N. (2017). Resistive switching memory devices fromatomic layer deposited binary and ternaryoxide thin films. Jülich: Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag.

Chicago Style Citation

Aslam, Nabeel. Resistive Switching Memory Devices Fromatomic Layer Deposited Binary and Ternaryoxide Thin Films. Jülich: Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, 2017.

MLA Citation

Aslam, Nabeel. Resistive Switching Memory Devices Fromatomic Layer Deposited Binary and Ternaryoxide Thin Films. Jülich: Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, 2017.

Warning: These citations may not always be 100% accurate.