This title appears in the Scientific Report :
2018
Please use the identifier:
http://dx.doi.org/10.1063/1.4981893 in citations.
Please use the identifier: http://hdl.handle.net/2128/17487 in citations.
Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO 2
Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO 2
The wake-up effect in yttrium doped hafnium oxide is investigated by pulse measurements, revealing the initial distribution of oxygen vacancies within symmetrical and asymmetrical layer stacks. It is shown that single pulses are sufficient to achieve a significant wake-up, whereby additional pulses...
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Personal Name(s): | Starschich, S. |
---|---|
Menzel, S. / Böttger, U. | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA-FIT; JARA-FIT |
Published in: | Journal of applied physics, 121 (2017) 15, S. 154102 - |
Imprint: |
Melville, NY
American Inst. of Physics
2017
|
DOI: |
10.1063/1.4981893 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
Published on 2017-04-21. Available in OpenAccess from 2018-04-21. Published on 2017-04-21. Available in OpenAccess from 2018-04-21. |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/17487 in citations.
The wake-up effect in yttrium doped hafnium oxide is investigated by pulse measurements, revealing the initial distribution of oxygen vacancies within symmetrical and asymmetrical layer stacks. It is shown that single pulses are sufficient to achieve a significant wake-up, whereby additional pulses lead to a stronger wake-up. Further cycling induces a degradation of the devices, which is explained by generation of oxygen vacancies and results in an electroforming step where subsequently resistive valence change mechanism switching is observed. The degradation and therefore the generation of oxygen vacancies show a strong frequency dependence, whereby the device lifetime is strongly increased for increasing frequencies |