This title appears in the Scientific Report :
2018
Please use the identifier:
http://dx.doi.org/10.23919/SISPAD.2017.8085327 in citations.
Random telegraph noise analysis in redox-based resistive switching devices using KMC simulations
Random telegraph noise analysis in redox-based resistive switching devices using KMC simulations
This paper presents a physical model to investigate the random telegraph noise (RTN) as an important source of the stochastic variability in redox-based resistive switching RAMs. Our noise analysis showed a higher level of instability during the high resistance state, where the oxygen vacancies, as...
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Personal Name(s): | Abbaspour, Elhameh |
---|---|
Menzel, Stephan / Jungemann, Christoph | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA-FIT; JARA-FIT |
Published in: |
Simulation of Semiconductor Processes and Devices (SISPAD) |
Imprint: |
IEEE
2017
|
Physical Description: |
5 |
DOI: |
10.23919/SISPAD.2017.8085327 |
Conference: | 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura (Japan), 2017-09-07 - 2017-09-09 |
Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
This paper presents a physical model to investigate the random telegraph noise (RTN) as an important source of the stochastic variability in redox-based resistive switching RAMs. Our noise analysis showed a higher level of instability during the high resistance state, where the oxygen vacancies, as the dominant traps inside the oxide, assist the current flow. The role of some important factors like read and reset voltages on the fluctuations of the reading process was studied. |