This title appears in the Scientific Report :
2018
Please use the identifier:
http://dx.doi.org/10.1021/acsami.8b02002 in citations.
Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells
Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells
Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO2) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO...
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Personal Name(s): | Köhler, Malte (Corresponding author) |
---|---|
Pomaska, Manuel / Lentz, Florian / Finger, Friedhelm / Rau, Uwe / Ding, Kaining | |
Contributing Institute: |
Photovoltaik; IEK-5 |
Published in: | ACS applied materials & interfaces, 10 (2018) 17, S. 14259–14263 |
Imprint: |
Washington, DC
Soc.
2018
|
PubMed ID: |
29664611 |
DOI: |
10.1021/acsami.8b02002 |
Document Type: |
Journal Article |
Research Program: |
Solar cells of the next generation |
Publikationsportal JuSER |
Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO2) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO2/c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO2, in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm2 were achieved using μc-SiC:H(n)/SiO2/c-Si as transparent passivated contacts. |